Products:

(In general made according to SEMI Standards and tested according to ASTM methods)

We supply High Quality Wafers in diameters of 150 mm, 125 mm, 100 mm and 3".
Orientations <111>, <100> and <110>.

Rough specification per dopant and resistivity range:

Dopant: Resistivity: Notes:
Phosphorus: 0.5-60 W × cm – (according to customer specification)
Boron: 0.001-60 W × cm – (according to customer specification)
Antimony: 0.008-0.6 W × cm – (typical substrate according to the specification)
Arsenic: 0.001-0.004 W × cm – (according to customer specification)
0.001-0.005 W × cm
0.004-0.010 W × cm

- chart

Carbon content: max. 0.5 ppm

Oxygen content: Custom controlled level in the range of 2438 ppma (ASTM F121-76)

Typical examples of controlled Oxygen groups:

02 – 31.0 36.8 ppma (<111> orientation)
02 – 28.0 32.0 ppma (<100> orientation)
02 – 29.0 35.0 ppma (<100> orientation)

Backside finish

- Standard acid or alkaline etched
- Soft Back Side Damaged (SBSD - short etch)
- Hard Back Side Damage (HBSD - wet bead blasting)
- Low Temperature Oxide sealed (LTO)
- Thermal Oxide sealed
- Advanced (HBSD+LTO)
- Backside Multilayers (Poly+LTO)
- Oxide Free Exclusion Ring




Polished wafers (Prime and Test)

Diameter Prime or Test Geometrical Properties TIR value given in microns
150 mm Prime SEMI M1.8-89 Std. Less than 4 mm
150 mm Test SEMI M8.6-93 Std. According to customer specification
125 mm Prime SEMI M1.7-89 Std. Less than 4 mm
125 mm Test SEMI M8.5-93 Std. According to customer specification
100 mm Prime SEMI M1.5-89 Std. Less than 4 mm
100 mm Test SEMI M8.3-93 Std. According to customer specification
3" Test SEMI M1.2-89 Std. Less than 4 mm
3" Test SEMI M8.2-93 Std. According to customer specification

On customer request we can offer different and tighter parameters then required by SEMI, for example: for 100 mm polished wafers except of std SEMI 52520 mm thickness we produce a lot of 40015 mm thick materials but other thickness is also available on request. The wafers are available with laser marking.

EPI products (SEMI M2-1296) : 150 mm, 125 mm, 100 mm and 3"
We have Epi Pro 5000 and Gemini 2 epitaxy deposition reactors.

Parameters of standard layers:

Substrate Dopant

Epi Layer Type

Epi Layer Thickness

Epi Layer Resistivity

Antimony
n/n+ p/n

up to 130 mm

0.01080 W × cm

Arsenic

 n/n+

up to 130 mm

0.01080 W × cm

Boron
n/n+ p/n

up to 130 mm

0.01080 W × cm
 

Customer spec. acc.

 Special epi layers and multilayers

up to 150 mm

up to 500 W × cm

Thickness uniformity

- Within Wafer 3 %
- Wafer to Wafer 3 %
- Run to Run 3 %

Resistivity uniformity

- Within Wafer 4 %
- Wafer to Wafer 4 %
- Run to Run 4 %

Sensor Grade Wafers (lapped and chemically cleaned)

Diameters range: 150 mm, 125 mm, 100 mm and 3".
Orientation (110) for 6" material available on customer request.
Controlled low Oxygen content, tight material geometry and high accuracy of flats location: 0, 0.12 deg.
Cemat's sensor grade wafers can be polished on both sides to suit Micromechanic Silicon Technology applications. Very precise wafers surface and flat orientation allows to obtain the designed etch patterns with high accuracy. 

Ready to Polish wafers (RTP)

Diameters range: 150 mm, 125 mm, 100 mm and 3".

Thickness tolerance: 5 microns
TTV value: less then 3 microns

Alkaline or acid etching available according to the customer request.

Double Side Polished (DSP-Wafers)

Diameters range: 150 mm, 125 mm, 100 mm and 3".
Thickness ranges, depanding on wafer diameter:
150 mm, 125 mm Standard thickness range: 525625 mm25mm
150 mm, 125 mm Non Std. thickness range: 400525 mm10mm or per customer request
100 mm, 3" Standard thickness range: 320625 mm20mm
100 mm, 3" Non Std. thickness range: 220320 mm10mm or per customer request


Cemat Silicon S.A.
133, Wolczynska St.
01-919 Warsaw, Poland

e-mail us: marketing@cematsil.com.pl

phone +48 22 835 19 39
phone +48 22 834 95 86
fax +48 22 865 77 35